Record link: 
http://hdl.handle.net/20.500.12708/137400
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Title: 
Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics
en
Citation: 
Böckle, R., Sistani, M., Eysin, K., Bartmann, M. G., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics. Advanced Electronic Materials, 7(3), 2001178. https://doi.org/10.1002/aelm.202001178
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Publisher DOI: 
10.1002/aelm.202001178
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Böckle, Raphael 
Sistani, Masiar 
Eysin, Kilian 
Bartmann, Maximilian G. 
Luong, Minh Anh 
den Hertog, Martien I. 
Lugstein, Alois 
Weber, Walter M. 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Journal: 
Advanced Electronic Materials 
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ISSN: 
2199-160X
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Date (published): 
2021
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Number of Pages: 
6
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Publisher: 
WILEY
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Peer reviewed: 
Yes
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Keywords: 
Electronic, Optical and Magnetic Materials
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Research Areas: 
Nanoelectronics: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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