Record link: 
http://hdl.handle.net/20.500.12708/137774
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Title: 
1/f Noise Characterization of Bilayer MoS₂ Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics
en
Citation: 
Pimpolari, L., Calabrese, G., Conti, S., Worsley, R., Majee, S., Polyushkin, D. K., Paur, M., Casiraghi, C., Müller, T., Iannaccone, G., Macucci, M., & Fiori, G. (2021). 1/f Noise Characterization of Bilayer MoS₂ Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics. Advanced Electronic Materials, 7(7), 1–8. https://doi.org/10.1002/aelm.202100283
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Publisher DOI: 
10.1002/aelm.202100283
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Pimpolari, Lorenzo 
Calabrese, Gabriele 
Conti, Silvia 
Worsley, Robyn 
Majee, Subimal 
Polyushkin, Dmitry K. 
Paur, Matthias 
Casiraghi, Cinzia 
Müller, Thomas 
Iannaccone, Giuseppe 
Macucci, Massimo 
Fiori, Gianluca 
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Organisational Unit: 
E387-01 - Forschungsbereich Photonik 
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Journal: 
Advanced Electronic Materials 
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ISSN: 
2199-160X
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Date (published): 
2021
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Number of Pages: 
8
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Peer reviewed: 
Yes
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Research Areas: 
Photonics: 70%
Materials Characterization: 15%
Telecommunication: 15%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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