Record link: 
http://hdl.handle.net/20.500.12708/138121
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Title: 
Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic
en
Citation: 
Sistani, M., Böckle, R., Falkensteiner, D., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic. ACS Nano, 15(11), 18135–18141. https://doi.org/10.1021/acsnano.1c06801
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Publisher DOI: 
10.1021/acsnano.1c06801
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Sistani, Masiar 
Böckle, Raphael 
Falkensteiner, David 
Luong, Minh Anh 
den Hertog, Martien I. 
Lugstein, Alois 
Weber, Walter M. 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Journal: 
ACS Nano 
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ISSN: 
1936-0851
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Date (published): 
2021
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Number of Pages: 
7
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Publisher: 
AMER CHEMICAL SOC
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Peer reviewed: 
Yes
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Keywords: 
General Engineering; General Materials Science; General Physics and Astronomy
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Research Areas: 
Surfaces and Interfaces: 25%
Materials Characterization: 25%
Structure-Property Relationship: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
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