Record link: 
http://hdl.handle.net/20.500.12708/139604
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Title: 
Gate-Tunable Negative Differential Resistance Enabling the Functional Diversification of Ge-Based Nanoelectronic Devices
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Citation: 
Sistani, M., Behrle, R., Weber, W. M., Luong, M. A., & den Hertog, M. (2022, September 19). Gate-Tunable Negative Differential Resistance Enabling the Functional Diversification of Ge-Based Nanoelectronic Devices [Conference Presentation]. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland.
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Sistani, Masiar 
Behrle, Raphael 
Weber, Walter Michael 
Luong, Minh Anh 
den Hertog, Martien 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
19-Sep-2022
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Event name: 
European Material Research Society (E-MRS) Fall Meeting 2022 
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Event date: 
19-Sep-2022 - 22-Sep-2022
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Event place: 
Warsaw, Poland
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Keywords: 
nanoelectronic devices; Ge-based; gate-tunable
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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