Record link: 
http://hdl.handle.net/20.500.12708/149451
-
Title: 
400 μm Diameter APD OEIC in 0.35 μm BiCMOS
en
Citation: 
Jukic, T., Steindl, B., & Zimmermann, H. (2016). 400 μm Diameter APD OEIC in 0.35 μm BiCMOS. IEEE Photonics Technology Letters, 28(18), 2004–2007. https://doi.org/10.1109/lpt.2016.2578979
-
Publisher DOI: 
10.1109/lpt.2016.2578979
-
Publication Type: 
Article - Original Research Article
en
Language: 
English
-
Authors: 
Jukic, Tomislav 
Steindl, Bernhard 
Zimmermann, Horst 
-
Organisational Unit: 
E354-02 - Forschungsbereich Integrated Circuits 
-
Journal: 
IEEE Photonics Technology Letters 
-
ISSN: 
1041-1135
-
Date (published): 
15-Sep-2016
-
Number of Pages: 
4
-
Peer reviewed: 
Yes
-
Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics
en
Abstract: 
An optoelectronic integrated circuit (OEIC) with a 400 μm diameter avalanche photodiode (APD) is present. The OEIC is designed for use in systems of optical wireless communication and communication over plastic optical fiber. The used APD reaches a quantum efficiency of 81.7% without an anti-reflection coating. In combination with the 0.35 μm bipolar complementary metal-oxide-semiconductor circuit, a data rate of 2 Gb/s can be reached with a sensitivity of -30.6 dBm (bit error rate 10⁻⁹ ) at a wavelength of 675 nm. The OEIC occupies an area of 960 μm × 1540 μm and is supplied with 3.3 V with a current consumption of 74 mA.
en
Research Areas: 
Photonics: 20%
Telecommunication: 70%
Sensor Systems: 10%
-
Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
-
Appears in Collections:
Article

Show full item record

Page view(s)

72
checked on Dec 1, 2023

Google ScholarTM

Check