Record link: 
http://hdl.handle.net/20.500.12708/160940
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Title: 
Improvement of safe operating area of power DMOS transistors
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Citation: 
Podgaynaya, A. (2010). Improvement of safe operating area of power DMOS transistors [Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/160940
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CatalogPlus: 
AC07809603
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Podgaynaya, Alevtina 
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Advisor: 
Gornik, Erich 
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Co-advisor: 
Schäffler, Friedrich 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2010
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Number of Pages: 
129
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Keywords: 
DMOS; sicherer Betriebsbereich; elektrostatische Entladung; Rücksprung; thermische Instabilität; TCAD Simulation; hochenergetische Ladungsträger
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DMOS; safe operating area; electrostatic discharge; snapback; thermal instability; TCAD simulation; hot-carrier stress
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Abstract: 
Electrical, electro-thermal destruction and hot-carrier degradation of n- and p-channel lateral and vertical double-diffused MOS in smart power ICs are investigated by electrical pulse experiments, simulations and failure analysis.
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Additional information: 
Zsfassung in dt. Sprache
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Appears in Collections:
Thesis

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