Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation

Abstract

This thesis examines the modeling of power MOSFETs for EMC (Electromagnetic Compatibility) simulation. For this purpose, several approaches are compared concerning quality and costs (time as well as money). As the ones available were either too expensive, time-consuming or the models created by them not accurate enough, a new modeling way is suggested, using the Saber Power MOSFET Tool, with external parasitics added to include influences of the package.<br />Extraction of the model parameters is studied for an exemplary MOSFET, comparing the data sheet information and measurement results. The models are verified by measurement of the transistor within a test circuit.<br />Different methods are applied to show the correlation between simulation and measurement both in the time domain as well as in the frequency domain.