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Record link: 
http://hdl.handle.net/20.500.12708/163984
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Title: 
Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks
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Citation: 
Henkel, C., Hellström, P.-E., Östling, M., Stöger-Pollach, M., Bethge, O., & Bertagnolli, E. (2012). Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks. Solid-State Electronics, 74, 7–12. https://doi.org/10.1016/j.sse.2012.04.004
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Publisher DOI: 
10.1016/j.sse.2012.04.004
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Publication Type: 
Article - Original Research Article
en
Authors: 
Henkel, Christoph 
Hellström, Per-Erik 
Östling, Mikael 
Stöger-Pollach, Michael 
Bethge, Ole 
Bertagnolli, Emmerich 
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Organisational Unit: 
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie 
E362 - Institut für Festkörperelektronik 
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Journal: 
Solid-State Electronics 
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ISSN: 
0038-1101
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Date (published): 
2012
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Number of Pages: 
6
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Condensed Matter Physics; Electronic, Optical and Magnetic Materials; Materials Chemistry
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Research Areas: 
Nanoelectronics: 30%
Surfaces and Interfaces: 40%
Materials Characterization: 30%
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Science Branch: 
Elektrotechnik, Elektronik
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