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Record link: 
http://hdl.handle.net/20.500.12708/166049
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Title: 
Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors
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Citation: 
Burchhart, T., Lugstein, A., Hyun, Y. J., Hochleitner, G., & Bertagnolli, E. (2009). Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors. Nano Letters, 9(11), 3739–3742. http://hdl.handle.net/20.500.12708/166049
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Publication Type: 
Article - Original Research Article
en
Authors: 
Burchhart, Thomas 
Lugstein, Alois 
Hyun, Youn Joo 
Hochleitner, Gottfried 
Bertagnolli, Emmerich 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Journal: 
Nano Letters 
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ISSN: 
1530-6984
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Date (published): 
2009
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Number of Pages: 
4
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Peer reviewed: 
Yes
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Research Areas: 
Structure-Property Relationship: 10%
Special and Engineering Materials: 10%
Non-metallic Materials: 10%
Materials Characterization: 10%
Surfaces and Interfaces: 10%
Nanoelectronics: 50%
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
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