Matovic, J., Adamovic, N., Jakšić, Z., & Schmid, U. (2010). Field effect transistor based on protons as charge carriers. In B. Jakoby & M. J. Vellekoop (Eds.), Eurosensor XXIV Conference (pp. 1368–1371). Elsevier BV. https://doi.org/10.1016/j.proeng.2010.09.369
Industrial and Manufacturing Engineering; Nanofluidic; proton transport; field effect transistor
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Abstract:
We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels.
The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of
electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical
double layer and by the potential applied to the transistor gate.
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Research Areas:
Surfaces and Interfaces: 50% Materials Characterization: 50%
