Record link: 
http://hdl.handle.net/20.500.12708/167332
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Title: 
Field effect transistor based on protons as charge carriers
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Citation: 
Matovic, J., Adamovic, N., Jakšić, Z., & Schmid, U. (2010). Field effect transistor based on protons as charge carriers. In B. Jakoby & M. J. Vellekoop (Eds.), Eurosensor XXIV Conference (pp. 1368–1371). Elsevier BV. https://doi.org/10.1016/j.proeng.2010.09.369
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Publisher DOI: 
10.1016/j.proeng.2010.09.369
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Matovic, J. 
Adamovic, N. 
Jakšić, Z. 
Schmid, U. 
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Organisational Unit: 
E366-02 - Forschungsbereich Mikrosystemtechnik 
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Published in: 
Eurosensor XXIV Conference 
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Date (published): 
2010
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Event name: 
Eurosensors XXIV 
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Event date: 
5-Sep-2010 - 8-Sep-2010
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Event place: 
Linz, Austria, Austria
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Number of Pages: 
4
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Publisher: 
Elsevier BV
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Keywords: 
Industrial and Manufacturing Engineering; Nanofluidic; proton transport; field effect transistor
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Abstract: 
We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.
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Research Areas: 
Surfaces and Interfaces: 50%
Materials Characterization: 50%
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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