Record link: 
http://hdl.handle.net/20.500.12708/167830
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Title: 
TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon
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Citation: 
Lee, J., Uhrmann, T., Dimopoulos, T., Brückl, H., & Fidler, J. (2010). TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon. IEEE Transactions on Magnetics, 46(6), 2067–2069. https://doi.org/10.1109/tmag.2010.2040594
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Publisher DOI: 
10.1109/tmag.2010.2040594
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Lee, Jehyun 
Uhrmann, Thomas 
Dimopoulos, Theodoros 
Brückl, Hubert 
Fidler, Josef 
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Organisational Unit: 
E138-04 - Forschungsbereich Quantum Materials 
E138-03 - Forschungsbereich Functional and Magnetic Materials 
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Journal: 
IEEE Transactions on Magnetics 
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ISSN: 
0018-9464
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Date (published): 
Jun-2010
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Number of Pages: 
3
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas: 
Quantum Many-Body Systems: 50%
Metallic Materials: 25%
Non-metallic Materials: 25%
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Science Branch: 
Physik, Mechanik, Astronomie
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Appears in Collections:
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