Record link: 
http://hdl.handle.net/20.500.12708/170655
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Title: 
A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier
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Citation: 
Bakalski, W., Sogl, B., Zannoth, M., Asam, M., Kapfelsperger, B., Berkner, J., Eisener, B., Thomann, W., Marcon, S., Österreicher, W., Napieralska, E., Rampf, E., Scholtz, A. L., & Klepser, B.-U. (2008). A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier. IEEE Journal of Solid-State Circuits, 43(9), 1920–1930. https://doi.org/10.1109/jssc.2008.2002337
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Publisher DOI: 
10.1109/jssc.2008.2002337
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Bakalski, Winfried 
Sogl, Bernhard 
Zannoth, Markus 
Asam, Michael 
Kapfelsperger, Boris 
Berkner, Jörg 
Eisener, Bernd 
Thomann, Wolfgang 
Marcon, Siegfried 
Österreicher, Wilfried 
Napieralska, Ewa 
Rampf, Erwin 
Scholtz, Arpad L. 
Klepser, Bernd-Ulrich 
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Organisational Unit: 
E389-02 - Forschungsbereich Wireless Communications 
E389 - Institute of Telecommunications 
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Journal: 
IEEE Journal of Solid-State Circuits 
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ISSN: 
0018-9200
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Date (published): 
16-Sep-2008
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Number of Pages: 
11
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering
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Abstract: 
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35 µm SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band.
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Research Areas: 
Telecommunication: 100%
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Science Branch: 
Elektrotechnik, Elektronik
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