Record link: 
http://hdl.handle.net/20.500.12708/175719
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Title: 
Silicon-Germanium Nanosheet Transistors, Contact and Electronic Transport Properties delivering Runtime Reconfigurable Transistors
en
Citation: 
Weber, W. M. (2023, February 15). Silicon-Germanium Nanosheet Transistors, Contact and Electronic Transport Properties delivering Runtime Reconfigurable Transistors [Conference Presentation]. 22nd International Winterschool New Developments in Solid State Physics, Mauterndorf, Austria.
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
15-Feb-2023
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Event name: 
22nd International Winterschool New Developments in Solid State Physics 
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Event date: 
11-Feb-2023 - 17-Feb-2023
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Event place: 
Mauterndorf, Austria
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Keywords: 
silicon; germanium; transistors; nanosheets
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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