Indirect Time-of-Flight with GHz Correlation Frequency and Integrated SPAD Reaching Sub-100 µm Precision in 0.35 µm CMOS

Abstract

The purpose of this work is to prove the suitability of integrated single-photon avalanche diode (SPAD)-based indirect time-of-flight (iTOF) for sub-100 µm precision depth sensing using a correlation approach with GHz modulation frequencies. For this purpose, a prototype containing a single pixel consisting of an integrated SPAD, quenching circuit, and two independent correlator circuits was fabricated in a 0.35 µm CMOS process and characterized. It achieved a precision of 70 µm and a nonlinearity of less than 200 µm at a received signal power of less than 100 pW. Sub-mm precision was achieved with a signal power of less than 200 fW. These results and the simplicity of our correlation approach underline the great potential of SPAD-based iTOF for future depth sensing applications.