Title: Electric Characterization of SiC Trench MOSFETs with DLTS and Admittance Spectroscopy
Other Titles: Elektrische Charakteriserung von SiC Trench MOSFETs mittels DLTS and Admittanz Spektroskopie
Language: English
Authors: Weger, Magdalena 
Qualification level: Diploma
Advisor: Grasser, Tibor 
Issue Date: 2021
Citation: 
Weger, M. (2021). Electric Characterization of SiC Trench MOSFETs with DLTS and Admittance Spectroscopy [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2021.91461
Number of Pages: 94
Qualification level: Diploma
Abstract: 
SiC trench MOSFETs aim to meet the need for efficient power transistors in our modern technology based society. State of the art are devices with aluminum (Al) as dopant in the inversion channel area. However, previous studies have shown an Al-related defect that might cause a channel mobility reduction. To overcome this SiC MOSFETs with boron (B)-implanted inversion channels are fabricated and electrically investigated. Devices with 10% B, 30% B and 100% B channel implantation are compared to the reference sample implanted with 100% Al. Basic measurement techniques as well as cryogenic characterizations such as DLTS and admittance spectroscopy are used to characterize the samples. A comparison between the latter two is drawn. Furthermore, results from an admittance spectroscopy simulation are shown in relation to the actual measurement.Since the analyzed B samples were annealed at low temperatures in order to prevent B out-diffusion, a non negligible amount of B can be found in the channel area by admittance spectroscopy. However, the measurement results indicate a B concentration that is too low to ensure a working metal oxide semiconductor field effect transistor (MOSFET) device. An outlook for further implantation dosages and annealing temperatures is given, which might lead to functioning MOSFETs with B as a channel implant.This thesis was written in cooperation with KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH. This work was funded by the Austrian Research PromotionAgency (FFG, Project No. 881110).
Keywords: SiC; Characterization; MOSFETs; DLTS; Admittance Spectroscopy; Defects
URI: https://doi.org/10.34726/hss.2021.91461
http://hdl.handle.net/20.500.12708/17841
DOI: 10.34726/hss.2021.91461
Library ID: AC16232841
Organisation: E360 - Institut für Mikroelektronik 
Publication Type: Thesis
Hochschulschrift
Appears in Collections:Thesis

Files in this item:


Page view(s)

18
checked on Jul 30, 2021

Download(s)

28
checked on Jul 30, 2021

Google ScholarTM

Check


Items in reposiTUm are protected by copyright, with all rights reserved, unless otherwise indicated.