Experimental characterization of bias temperature instabilities in modern transistor technologies

DC Field	Value	Language
dc.contributor.advisor	Grasser, Klaus-Tibor	-
dc.contributor.author	Waltl, Michael	-
dc.date.accessioned	2021-07-07T09:12:54Z	-
dc.date.issued	2016	-
dc.date.submitted	2016-09	-
dc.identifier.uri	https://doi.org/10.34726/hss.2016.38201	-
dc.identifier.uri	http://hdl.handle.net/20.500.12708/18010	-
dc.description	Zusammenfassung in deutscher Sprache	-
dc.format	xxxvii, 158 Seiten	-
dc.language	English	-
dc.language.iso	en	-
dc.subject	Reliability	en
dc.subject	Bias Temperature Instabilities	en
dc.subject	pMOSFET	en
dc.subject	nMOSFET	en
dc.subject	NBTI	en
dc.subject	PBTI	en
dc.subject	TDDS	en
dc.title	Experimental characterization of bias temperature instabilities in modern transistor technologies	en
dc.type	Thesis	en
dc.type	Hochschulschrift	de
dc.identifier.doi	10.34726/hss.2016.38201	-
dc.publisher.place	Wien	-
tuw.thesisinformation	Technische Universität Wien	-
tuw.publication.orgunit	E360 - Institut für Mikroelektronik	-
dc.type.qualificationlevel	Doctoral	-
dc.identifier.libraryid	AC13328705	-
dc.description.numberOfPages	158	-
dc.thesistype	Dissertation	de
dc.thesistype	Dissertation	en
item.openairecristype	http://purl.org/coar/resource_type/c_18cf	-
item.openairecristype	http://purl.org/coar/resource_type/c_18cf	-
item.openaccessfulltext	Open Access	-
item.openairetype	Thesis	-
item.openairetype	Hochschulschrift	-
item.fulltext	with Fulltext	-
item.languageiso639-1	en	-
item.grantfulltext	open	-
item.cerifentitytype	Publications	-
item.cerifentitytype	Publications	-
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