Title: Experimental characterization of bias temperature instabilities in modern transistor technologies
Language: English
Authors: Waltl, Michael 
Qualification level: Doctoral
Advisor: Grasser, Klaus-Tibor 
Issue Date: 2016
Number of Pages: 158
Qualification level: Doctoral
Keywords: Reliability; Bias Temperature Instabilities; pMOSFET; nMOSFET; NBTI; PBTI; TDDS
URI: https://doi.org/10.34726/hss.2016.38201
http://hdl.handle.net/20.500.12708/18010
DOI: 10.34726/hss.2016.38201
Library ID: AC13328705
Organisation: E360 - Institut für Mikroelektronik 
Publication Type: Thesis
Hochschulschrift
Appears in Collections:Thesis

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