Record link: 
https://doi.org/10.34726/hss.2016.38201
http://hdl.handle.net/20.500.12708/18010
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Title: 
Experimental characterization of bias temperature instabilities in modern transistor technologies
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Citation: 
Waltl, M. (2016). Experimental characterization of bias temperature instabilities in modern transistor technologies [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2016.38201
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reposiTUm DOI: 
10.34726/hss.2016.38201
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CatalogPlus: 
AC13328705
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Waltl, Michael 
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Advisor: 
Grasser, Klaus-Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Date (published): 
2016
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Number of Pages: 
158
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Keywords: 
Reliability; Bias Temperature Instabilities; pMOSFET; nMOSFET; NBTI; PBTI; TDDS
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Additional information: 
Zusammenfassung in deutscher Sprache
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License: 
In Copyright
de
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