Roemer, C., Darbandy, G., Schwarz, M., Trommer, J., Simon, M., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2022). Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. In Mixed Design of Integrated Circuits and Systems – MIXDES 2022 (pp. 33–39). https://doi.org/10.23919/MIXDES55591.2022.9838216
Mixed Design of Integrated Circuits and Systems – MIXDES 2022
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ISBN:
9788363578213
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Date (published):
1-Jan-2022
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Event name:
29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
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Event date:
23-Jun-2022 - 24-Jun-2022
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Event place:
Wroclaw, Poland
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Number of Pages:
7
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Keywords:
channel resistance; closed-form; compact modeling; field emission; RFET; SBFET; Schottky barrier; thermionic emission; tunneling current
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Abstract:
Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.