Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂ and n‐type MoS₂

Abstract

Transition metal dichalcogenides (TMDCs) are a promising class of two-dimensional (2D) materials for flexible electronic applications due to their low integration temperature, good electronic properties, and excellent mechanical flexibility. Moreover, TMDCs offer the possibility of co-integrating both n- and p-type transistors on the same substrate, enabling the realization of complementary metal-oxide-semiconductor (CMOS) circuits. In this study, n-type MoS₂ field-effect transistors (FETs), and p-type WSe₂-FETs integrated on a flexible foil substrate fabricated by standard thin-film technology are presented. These devices exhibit high stability in their electronic operation under strain and repeated bending cycles. A CMOS inverter based on these transistors is also successfully demonstrated, which shows excellent switching behaviour with high gain (up to 100), high noise margin (0.87 · VDD), and low average static power consumption (40 pW).