Aluminium nitride (AlN) is renowned for its insulating properties and thermodynamic stability. Therefore, it is suitable for various applications in a wide temperature range. Consequently, it is relevant to investigate cost-effective and sustainable deposition techniques for growing thin films of AlN. Within this study, the deposition of AlN thin films via reactively physical vapor deposition (PVD) was been studied. Films were grown using 3’’ Al targets and N2 as a reactive gas in an in-house developed magnetron sputter system. To address the challenges of growing reactive insulating films, various techniques, including direct magnetron sputtering (DCMS), high-power pulsed magnetron sputtering (HPPMS), and pulsed magnetron sputtering (PMS), were employed. Phase formation was examined using X-ray diffractometry, while the deposition rate and film morphology were investigated through scanning and transmission electron microscopy. The insulating behaviour of the coatings was analysed using in-situ impedance spectroscopy across a temperature range from 400 to 900°C. A threshold reactive gas amount is required to shift the electric behaviour from a metallic to a dielectric mode, resulting in higher electrical resistivity the films deposited via HIPIMS.