Record link: 
https://doi.org/10.34726/hss.2025.130326
http://hdl.handle.net/20.500.12708/215104
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Title: 
Analysis of device behaviour of single and multi finger SCRs with buried doping layers in experiment and TCAD
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Citation: 
Krainer, R. (2025). Analysis of device behaviour of single and multi finger SCRs with buried doping layers in experiment and TCAD [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2025.130326
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reposiTUm DOI: 
10.34726/hss.2025.130326
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CatalogPlus: 
AC17513005
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Krainer, Rudolf 
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Advisor: 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2025
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Number of Pages: 
132
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Keywords: 
ESD protection device; ESD robustness; silicon controlled rectifier (SCR); I-V hysteresis; multi finger device; TCAD simulation; emission microscopy; transient interferometric mapping
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Additional information: 
Arbeit an der Bibliothek noch nicht eingelangt - Daten nicht geprueft - gesperrte Arbeit (bis 2027-04-24+02:00)
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
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License: 
In Copyright
de
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