Record link: 
http://hdl.handle.net/20.500.12708/216125
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Title: 
Simultaneous Analysis of Local Device Layer Thickness and Film Stress on Cantilevered MEMS Structures
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Citation: 
Huber, D., Schallert, C. A., Pfusterschmied, G., & Schmid, U. (2025). Simultaneous Analysis of Local Device Layer Thickness and Film Stress on Cantilevered MEMS Structures. In SMSI 2025 : Proceedings : Proof reading version (pp. 85–86). AMA Verband für Sensorik und Messtechnik e.V. https://doi.org/10.5162/SMSI2025/B2.3
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Publisher DOI: 
10.5162/SMSI2025/B2.3
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Huber, Dominik 
Schallert, Christoph Anton 
Pfusterschmied, Georg 
Schmid, Ulrich 
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Organisational Unit: 
E366-02 - Forschungsbereich Mikrosystemtechnik 
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Published in: 
SMSI 2025 : Proceedings : Proof reading version 
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Date (published): 
May-2025
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Event name: 
SMSI 2025 - Sensor and Measurement Science International 
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Event date: 
6-May-2025 - 8-May-2025
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Event place: 
Nürnberg, Germany
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Number of Pages: 
2
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Publisher: 
AMA Verband für Sensorik und Messtechnik e.V.
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Keywords: 
device layer thickness; film stress; WLI; SiC; automation
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Abstract: 
This paper reports on a passive MEMS structure facilitating the local measurement of both, the device layer thickness and residual film stress with white light interferometry (WLI). The structure consists of a released single-side clamped plate (SSCP) and a step-profile etched through the device layer down to a silicon dioxide layer. In doing so, both the static deflection and the thickness are determined, independent of material parameters, such as the index of refraction or surface roughness. Both key properties can be efficiently measured with the same tailored WLI set-up.
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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