Record link: 
https://doi.org/10.34726/hss.2025.106907
http://hdl.handle.net/20.500.12708/219571
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Title: 
Doping profiling and scanning electron microscopy on Silicon Carbide devices
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Citation: 
Moser, M. A. (2025). Doping profiling and scanning electron microscopy on Silicon Carbide devices [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2025.106907
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reposiTUm DOI: 
10.34726/hss.2025.106907
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CatalogPlus: 
AC17652290
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Moser, Maximilian Alexander 
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Advisor: 
Smoliner, Jürgen 
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Referee: 
Sistani, Masiar 
Stöger-Pollach, Michael 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2025
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Number of Pages: 
111
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Keywords: 
Rasterelektronenmikroskopie; SiC; Dotieungsrprofile
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Scanning Electron Microscopy; SiC; Doping profiling
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License: 
In Copyright
de
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