Hard switching reliability and short circuit robustness of lateral high voltage GaN HEMTs

Wieland, Dominik

doi:10.34726/hss.2026.137790

Record link:

https://doi.org/10.34726/hss.2026.137790
http://hdl.handle.net/20.500.12708/225277

Title:

Hard switching reliability and short circuit robustness of lateral high voltage GaN HEMTs

Citation:

Wieland, D. (2026). Hard switching reliability and short circuit robustness of lateral high voltage GaN HEMTs [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.137790

reposiTUm DOI:

10.34726/hss.2026.137790

CatalogPlus:

AC17755386

Publication Type:

Thesis - Dissertation

Language:

English

Authors:

Wieland, Dominik

Advisor:

Pogany, Dionyz

Organisational Unit:

E362 - Institut für Festkörperelektronik

Date (published):

2026

Number of Pages:

140

Keywords:

GaN; GaN HEMT; short circuit; short circuit robustness; hole injection; GaN reliability

Additional information:

Arbeit an der Bibliothek noch nicht eingelangt - Daten nicht geprueft - gesperrte Arbeit (bis 2027-11-18+01:00)
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers

License:

In Copyright

Appears in Collections:

Thesis

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