Record link: 
http://hdl.handle.net/20.500.12708/226179
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Title: 
Impact of Nitrogen Doping on the Q-Factor of Polycrystalline 3C-SiC MEMS Resonators
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Citation: 
Huber, D., Jurekovic, P., Schallert, C. A., Pfusterschmied, G., & Schmid, U. (2025). Impact of Nitrogen Doping on the Q-Factor of Polycrystalline 3C-SiC MEMS Resonators. In Proceedings - EUROSENSORS XXXVII (pp. 72–73). https://doi.org/10.5162/EUROSENSORS2025/M2.2.4
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Publisher DOI: 
10.5162/EUROSENSORS2025/M2.2.4
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Huber, Dominik 
Jurekovic, Patricia 
Schallert, Christoph Anton 
Pfusterschmied, Georg 
Schmid, Ulrich 
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Organisational Unit: 
E366-02 - Forschungsbereich Mikrosystemtechnik 
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Published in: 
Proceedings - EUROSENSORS XXXVII 
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ISBN: 
978-3-910600-07-2
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Date (published): 
2025
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Event name: 
37th European Conference on Solid-State Transducers (EUROSENSORS 2025) 
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Event date: 
7-Sep-2025 - 10-Sep-2025
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Event place: 
Wroclaw, Poland
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Number of Pages: 
2
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Keywords: 
MEMS resonators; SiC, doping; Q-factor; LPCVD
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Abstract: 
This paper reports on the impact of nitrogen doping on the quality factor (Q) of polycrystalline 3C-SiC MEMS resonators. The resonance characteristics of mechanical beam resonators fabricated from an unintentionally and an intentionally doped 3C-SiC thin film were measured with laser Doppler vibrometry. We find a reduction of Q of 28% and 39% for the first and second out-of-plane modes when comparing the unintentionally with the intentionally doped thin film. The difference in Q is attributed to a modification of Young’s modulus (E), due to a change in microstructure and/or the average bond strength.
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Research Areas: 
Sensor Systems: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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