Huber, D., Jurekovic, P., Schallert, C. A., Pfusterschmied, G., & Schmid, U. (2025). Impact of Nitrogen Doping on the Q-Factor of Polycrystalline 3C-SiC MEMS Resonators. In AMA Service GmbH (Ed.), Proceedings - EUROSENSORS XXXVII (pp. 72–73). https://doi.org/10.5162/EUROSENSORS2025/M2.2.4
37th European Conference on Solid-State Transducers (EUROSENSORS 2025)
en
Event date:
7-Sep-2025 - 10-Sep-2025
-
Event place:
Wroclaw, Poland
-
Number of Pages:
2
-
Keywords:
MEMS resonators; SiC, doping; Q-factor; LPCVD
en
Abstract:
This paper reports on the impact of nitrogen doping on the quality factor (Q) of polycrystalline 3C-SiC MEMS resonators. The resonance characteristics of mechanical beam resonators fabricated from an unintentionally and an intentionally doped 3C-SiC thin film were measured with laser Doppler vibrometry. We find a reduction of Q of 28% and 39% for the first and second out-of-plane modes when comparing the unintentionally with the intentionally doped thin film. The difference in Q is attributed to a modification of Young’s modulus (E), due to a change in microstructure and/or the average bond strength.
