Moser, M., Pobegen, G., & Smoliner, J. (2022). Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC. Materials Science Forum, 1089, 23–29. https://doi.org/10.4028/p-ike7kj
E362-01 - Forschungsbereich Optoelektronische Materialien E058-06 - Fachbereich Zentrum für Forschungsdatenmanagement
-
Journal:
Materials Science Forum
-
ISSN:
0255-5476
-
Date (published):
31-Aug-2022
-
Number of Pages:
7
-
Publisher:
Trans Tech Publications Ltd.
-
Peer reviewed:
Yes
-
Keywords:
Doping Concentration; Doping Contrast; Gray Value; Physical Model; Quantification; Quasi Fermi Level Splitting; Scanning Electron Microscope; Secondary Electron
en
Abstract:
We discuss the quantification of the secondary electron doping contrast in the scanning electron microscope on 4H-SiC. It has been observed and studied at length mostly on silicon, but no conclusive theoretical model has been proposed yet. Therefore, we propose a simple physical model that allows for a quantification of the doping contrast. It is based on the changes in effective ionization energy for different doping concentrations and types. For a better agreement between our model and the experiment, a locally increased temperature of the electron system or separate quasi Fermi levels for electrons and holes have to be assumed. A line profile of the sample under investigation is compared with a SRIM simulation of the corresponding implant and shows very good agreement.
