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Record link:
https://doi.org/10.34726/hss.2026.141100
http://hdl.handle.net/20.500.12708/227706
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Title:
Electrical characterization and modeling of charge accumulation and transport processes in GaN HEMTs
en
Citation:
Butej, B. (2025).
Electrical characterization and modeling of charge accumulation and transport processes in GaN HEMTs
[Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.141100
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reposiTUm DOI:
10.34726/hss.2026.141100
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CatalogPlus:
AC17844180
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Publication Type:
Thesis - Dissertation
en
Language:
English
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Authors:
Butej, Boris
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Advisor:
Pogany, Dionyz
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Organisational Unit:
E362 - Institut für Festkörperelektronik
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Date (published):
2025
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Number of Pages:
120
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Keywords:
GaN HEMT; GaN-auf-Silizium; Puffer-Ladungsfang; Lochinjektion; lateraler Lochtransport; Puffer Ladungsmodell; Back-gating; OFF-State Stress; dynamischer Einschaltwiderstand; Schwellwertspannungsverschiebung
de
GaN HEMT; GaN-on-Si; buffer trapping; buffer charging; hole injection; lateral hole transport; buffer charging model; back-gating; OFF-state stress; dynamic ON-resistance; threshold voltage shift
en
License:
In Copyright
de
Appears in Collections:
Thesis
Fulltext (Version of Record (published version))
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In Copyright
Embargo. Accessible from 01.03.2028
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