Record link: 
https://doi.org/10.34726/hss.2026.141100
http://hdl.handle.net/20.500.12708/227706
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Title: 
Electrical characterization and modeling of charge accumulation and transport processes in GaN HEMTs
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Citation: 
Butej, B. (2025). Electrical characterization and modeling of charge accumulation and transport processes in GaN HEMTs [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.141100
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reposiTUm DOI: 
10.34726/hss.2026.141100
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CatalogPlus: 
AC17844180
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Butej, Boris 
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Advisor: 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2025
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Number of Pages: 
120
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Keywords: 
GaN HEMT; GaN-auf-Silizium; Puffer-Ladungsfang; Lochinjektion; lateraler Lochtransport; Puffer Ladungsmodell; Back-gating; OFF-State Stress; dynamischer Einschaltwiderstand; Schwellwertspannungsverschiebung
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GaN HEMT; GaN-on-Si; buffer trapping; buffer charging; hole injection; lateral hole transport; buffer charging model; back-gating; OFF-state stress; dynamic ON-resistance; threshold voltage shift
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License: 
In Copyright
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