Record link: 
http://hdl.handle.net/20.500.12708/229437
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Title: 
An Ultra-Thin Body SiGeSn Transistor for Cryogenic Electronics
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Citation: 
Krajiczek, P., Fuchsberger, A., Knaller, N. T., Wind, L., Nazzari, D., Vogl, L. M., Schweizer, P., Prado Navarrete, E., Aberl, J., Brehm, M., Weber, W. M., & Sistani, M. (2026, June). An Ultra-Thin Body SiGeSn Transistor for Cryogenic Electronics [Poster Presentation]. MESS26 - Microelectronic Systems Symposium, Wien, Austria.
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Publication Type: 
Presentation - Poster Presentation
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Language: 
English
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Authors: 
Krajiczek, Paul 
Fuchsberger, Andreas 
Knaller, Nikolas Thomas 
Wind, Lukas 
Nazzari, Daniele 
Vogl, Lilian M. 
Schweizer, Peter 
Prado Navarrete, Enrique 
Aberl, Johannes 
Brehm, Moritz 
Weber, Walter M. 
Sistani, Masiar 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
E056-29 - Fachbereich BioDevX 
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Date (published): 
Jun-2026
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Event name: 
MESS26 - Microelectronic Systems Symposium 
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Event date: 
25-Jun-2026 - 26-Jun-2026
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Event place: 
Wien, Austria
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Keywords: 
SiGeSn; Transistor; ultra-thin; Cryogenics
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Research Areas: 
Nanoelectronics: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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