Record link: 
http://hdl.handle.net/20.500.12708/230559
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Title: 
Modeling of Radiation-Induced Diffusion and Pressure-Driven Outgassing of Xe in Si
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Citation: 
Li, B., & Hobler, G. (2026). Modeling of Radiation-Induced Diffusion and Pressure-Driven Outgassing of Xe in Si. In IBMM-24: 21-26 June 2026 : Helsinki, Finland : Book of Abstracts. 24th International Conference on Ion Beam Modification of Materials (IBMM-24), Helsinki, Finland.
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Li, Bailiang 
Hobler, Gerhard 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Published in: 
IBMM-24: 21-26 June 2026 : Helsinki, Finland : Book of Abstracts 
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Date (published): 
25-Jun-2026
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Event name: 
24th International Conference on Ion Beam Modification of Materials (IBMM-24) 
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Event date: 
21-Jun-2026 - 26-Jun-2026
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Event place: 
Helsinki, Finland
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Number of Pages: 
1
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Keywords: 
Modeling; Radiation-Induced Diffusion; Xe; computational fluid dynamics
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Research Areas: 
Computational Fluid Dynamics: 30%
Modeling and Simulation: 70%
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Science Branch: 
1030 - Physik, Astronomie: 50%
2020 - Elektrotechnik, Elektronik, Informationstechnik: 50%
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Appears in Collections:
Conference Paper

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