Record link: 
http://hdl.handle.net/20.500.12708/231002
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Title: 
Electro-thermal Simulation of aSi0.33Ge0.665Sn0.005 Reconfigurable Field-effect Transistor
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Citation: 
Bozkurt, D., Malignaggi, A., Zaitsev, I., Sistani, M., Fuchsberger, A., Knaller, N. T., Carta Corrado, & Manganelli, C. L. (2026, September 17). Electro-thermal Simulation of aSi0.33Ge0.665Sn0.005 Reconfigurable Field-effect Transistor [Poster Presentation]. 32nd Internatinal Workshop Thermal Investigations of ICs and Systems - THERMINIC 2026, Berlin, Germany.
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Publication Type: 
Presentation - Poster Presentation
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Language: 
English
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Authors: 
Bozkurt, Duru 
Malignaggi, Andrea 
Zaitsev, Ignatii 
Sistani, Masiar 
Fuchsberger, Andreas 
Knaller, Nikolas Thomas 
Carta Corrado 
Manganelli, Costanza Lucia 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
17-Sep-2026
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Event name: 
32nd Internatinal Workshop Thermal Investigations of ICs and Systems - THERMINIC 2026 
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Event date: 
16-Sep-2026 - 18-Sep-2026
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Event place: 
Berlin, Germany
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Keywords: 
Schottky-barrier FET; SiGeSn; cryogenic electronics; temperature-dependent modeling
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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