Title: Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires
Language: English
Authors: Seifner, Michael S.
Sistani, Masiar
Zivadinovic, Ivan 
Bartmann, Maximilian G. 
Lugstein, Alois
Barth, Sven
Category: Short/Brief/Rapid Communication
Short/Brief/Rapid Communication
Issue Date: 2019
Journal: Crystal Growth & Design
Varying the growth conditions of gallium-seeded germanium nanostructures leads to significant variations in morphology, and particularly of the electronic properties inducing a transition from the hyperdoping regime to intrinsic germanium crystal formation. The consumption of the growth seed leads to cone-type nanostructures with incorporation of ∼3.8 ± 0.7 at% Ga in Ge at temperatures below 350 °C, while a high density of Ge nanowires with constant diameter can be obtained at higher temperatures. The high-temperature Ga-seeded Ge nanowires exhibit electronic properties of intrinsic Ge nanowires.
DOI: 10.1021/acs.cgd.9b00210
Library ID: AC15355374
URN: urn:nbn:at:at-ubtuw:3-5616
ISSN: 1528-7505
Organisation: E165 - Institut für Materialchemie 
Publication Type: Article
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