Seifner, M. S., Sistani, M., Zivadinovic, I., Bartmann, M. G., Lugstein, A., & Barth, S. (2019). Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires. Crystal Growth and Design. https://doi.org/10.1021/acs.cgd.9b00210
Varying the growth conditions of gallium-seeded germanium nanostructures leads to significant variations in morphology, and particularly of the electronic properties inducing a transition from the hyperdoping regime to intrinsic germanium crystal formation. The consumption of the growth seed leads to cone-type nanostructures with incorporation of ∼3.8 ± 0.7 at% Ga in Ge at temperatures below 350 °C, while a high density of Ge nanowires with constant diameter can be obtained at higher temperatures. The high-temperature Ga-seeded Ge nanowires exhibit electronic properties of intrinsic Ge nanowires.
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The final publication is available via <a href="https://doi.org/10.1021/acs.cgd.9b00210" target="_blank">https://doi.org/10.1021/acs.cgd.9b00210</a>.
