Record link: 
http://hdl.handle.net/20.500.12708/76649
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Title: 
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory
en
Citation: 
Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., & Sverdlov, V. (2019). Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71). Institute for Microelectronics, TU Wien. http://hdl.handle.net/20.500.12708/76649
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Publication Type: 
Inproceedings - Abstract Book Contribution
en
Language: 
English
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Authors: 
Orio, Roberto 
Makarov, Alexander 
Selberherr, Siegfried 
Gös, Wolfgang 
Ender, Johannes 
Fiorentini, Simone 
Sverdlov, Viktor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) 
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ISBN: 
978-3-9504738-0-3
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Date (published): 
2019
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Event name: 
International Workshop on Computational Nanotechnology (IWCN 2019) 
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Event date: 
20-May-2019 - 24-May-2019
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Event place: 
Evanston, IL, United States of America (the)
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Number of Pages: 
3
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Publisher: 
Institute for Microelectronics, TU Wien, Vienna, Austria
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Peer reviewed: 
Yes
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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