Record link: 
http://hdl.handle.net/20.500.12708/76824
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Title: 
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM
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Citation: 
de Orio, R. L., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., & Sverdlov, V. (2019). Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. IEEE. https://doi.org/10.1109/essderc.2019.8901780
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Publisher DOI: 
10.1109/essderc.2019.8901780
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
de Orio, Roberto L. 
Makarov, Alexander 
Selberherr, Siegfried 
Gös, Wolfgang 
Ender, Johannes 
Fiorentini, Simone 
Sverdlov, Viktor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) 
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ISBN: 
978-1-7281-1539-9
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DOI of the book: 
10.1109/ESSDERC46994.2019
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Date (published): 
2019
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Event name: 
49th European Solid-State Device Research Conference (ESSDERC) 
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Event date: 
23-Sep-2019 - 26-Sep-2019
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Event place: 
Cracow, Poland
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Number of Pages: 
4
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Publisher: 
IEEE
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Peer reviewed: 
Yes
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Research Areas: 
Nanoelectronics: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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