Record link: 
http://hdl.handle.net/20.500.12708/78084
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Title: 
Epitaxy of YbRh2Si2 on Ge(001)
en
Citation: 
Isceri, S., Giparakis, M., Beiser, M., Detz, H., Schrenk, W., Bühler-Paschen, S., Strasser, G., & Andrews, A. M. (2021, October). Epitaxy of YbRh2Si2 on Ge(001) [Poster Presentation]. German MBE Workshop 2021, Göttingen, Germany. http://hdl.handle.net/20.500.12708/78084
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Publication Type: 
Presentation - Poster Presentation
en
Language: 
English
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Authors: 
Isceri, Stefania 
Giparakis, Miriam 
Beiser, Maximilian 
Detz, Hermann 
Schrenk, Werner 
Bühler-Paschen, Silke 
Strasser, Gottfried 
Andrews, Aaron Maxwell 
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Organisational Unit: 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Date (published): 
Oct-2021
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Event name: 
German MBE Workshop 2021 
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Event date: 
14-Oct-2021 - 15-Oct-2021
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Event place: 
Göttingen, Germany
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Keywords: 
Epitaxy
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Abstract: 
YbRh2Si2 is a heavy fermion metal [1, 2], it has a well-defined quantum critical point [2, 3], and shows superconductivity below 10 mK [4]. Literature reports the synthesis of bulk YbRh2Si2 by various techniques. This work investigates the growth of YbRh2Si2 thin films by molecular beam epitaxy (MBE) with the goal of single crystal thin films.
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Research Areas: 
Materials Characterization: 40%
Photonics: 60%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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