Record link: 
http://hdl.handle.net/20.500.12708/79664
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Title: 
Characterization of hot electron degradation in GaN based HEMTs
en
Citation: 
Padovan, V. (2021). Characterization of hot electron degradation in GaN based HEMTs [Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/79664
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CatalogPlus: 
AC16310945
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Publication Type: 
Thesis - Dissertation
en
Language: 
English
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Authors: 
Padovan, Valeria 
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Advisor: 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2021
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Number of Pages: 
105
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Keywords: 
GaN; HEMT; Halbleiterbauelement; Zuverlaessigkeit; heisse Elektronen
de
 
GaN; HEMT; semiconductor device; reliability; hot electron degradation
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Additional information: 
Zusammenfassung in deutscher Sprache
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
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