Record link: 
http://hdl.handle.net/20.500.12708/81243
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Title: 
Physical Characterization of Dislocations in III-N Semiconductors including Quantification and Classification
en
Citation: 
Scales, Z., Reisinger, M., Taylor, A., Nelhiebel, M., & Stöger-Pollach, M. (2022, November 24). Physical Characterization of Dislocations in III-N Semiconductors including Quantification and Classification [Poster Presentation]. Infineon meets University, München, Germany. http://hdl.handle.net/20.500.12708/81243
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Publication Type: 
Presentation - Poster Presentation
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Language: 
English
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Authors: 
Scales, Ze 
Reisinger, Michael 
Taylor, Aidan 
Nelhiebel, Michael 
Stöger-Pollach, Michael 
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Organisational Unit: 
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie 
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Date (published): 
24-Nov-2022
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Event name: 
Infineon meets University 
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Event date: 
24-Nov-2022
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Event place: 
München, Germany
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Keywords: 
EELS; CL; TEM
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Research facilities: 
Universitäre Service-Einrichtung für Transmissionselektronenmikroskopie 
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Project title: 
Multidisziplinäre Charakterisierung & Modellierung für innovative Prozess- & Produktintegration von Leistungshalbleitern: 6000010595 (Infineon Technologies Ausria AG) 
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Research Areas: 
Materials Characterization: 50%
Non-metallic Materials: 50%
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Science Branch: 
2100 - Nanotechnologie: 25%
1030 - Physik, Astronomie: 50%
2020 - Elektrotechnik, Elektronik, Informationstechnik: 25%
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