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This item was automatically migrated from a legacy system. It's data has not been checked and might not meet the quality criteria of the present system.
Record link:
http://hdl.handle.net/20.500.12708/89858
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Title:
ALD grown La2O3 for Ge-based MOS-device applications
en
Citation:
Bethge, O., Abermann, S., Henkel, C., Stöger-Pollach, M., Smoliner, J., & Bertagnolli, E. (2011).
ALD grown La2O3 for Ge-based MOS-device applications
. E-MRS Spring Meeting 2008, Strasbourg, France. http://hdl.handle.net/20.500.12708/89858
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Publication Type:
Presentation - Conference Presentation
en
Language:
English
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Authors:
Bethge, Ole
Abermann, Stephan
Henkel, Christoph
Stöger-Pollach, Michael
Smoliner, Jürgen
Bertagnolli, Emmerich
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Organisational Unit:
E362 - Institut für Festkörperelektronik
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Date (published):
2011
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Event name:
E-MRS Spring Meeting 2008
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Event date:
26-May-2008 - 30-May-2008
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Event place:
Strasbourg, France
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Science Branch:
Elektrotechnik, Elektronik
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Appears in Collections:
Presentation
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