| Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Palankovski, Vassil ; Kuzmik, J. | A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications | Konferenzbeitrag Inproceedings | 2012 |
| 2 | | Palankovski, Vassil ; Kuzmik, J. | Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation | Konferenzbeitrag Inproceedings | 2012 |
| 3 | | Fiorentini, Simone ; Lacerda de Orio, Roberto ; Selberherr, Siegfried ; Ender, Johannes ; Goes, Wolfgang ; Sverdlov, Viktor | Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM | Konferenzbeitrag Inproceedings  | 2020 |
| 4 | | Illarionov, Yury Yuryevich ; Knobloch, Theresia ; Grasser, Tibor | (Invited) Where Are the Best Insulators for 2D Field-Effect Transistors? | Konferenzbeitrag Inproceedings | 2020 |
| 5 | | Franco, J. ; Kaczer, Ben ; Mitard, J. ; Toledano-Luque, M. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Kauerauf, T. ; Grasser, Tibor ; Witters, L. ; Hellings, Geert ; Ragnarsson, L. A. ; Horiguchi, N. ; Heyns, Marc M. ; Groeseneken, G. | Reliability of SiGe Channel MOS | Konferenzbeitrag Inproceedings | 2012 |
| 6 | | Hollauer, Christian ; Ceric, Hajdin ; Selberherr, Siegfried | Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress | Buchbeitrag Book Contribution | 2005 |
