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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Franco, J. ; Kaczer, B. ; Eneman, G. ; Mitard, J. ; Stesmans, A. ; Afanas'ev, V. ; Kauerauf, T. ; Roussel, Ph.J. ; Toledano-Luque, M. ; Cho, M. ; Degraeve, R. ; Grasser, T. ; Ragnarsson, L.-A. ; Witters, L. ; Tseng, J. ; Takeoka, S. ; Wang, W.-E. ; Hoffmann, T.Y. ; Groeseneken, G. | 6&#x00C5; EOT Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFET with optimized reliability (V<inf>DD</inf>=1V): Meeting the NBTI lifetime target at ultra-thin EOT | Konferenzbeitrag Inproceedings | 2010 |
| 2 | | Pourfath, M. ; Kosina, H. ; Selberherr, S. | A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters | Konferenzbeitrag Inproceedings | 2006 |
| 3 | | Orio, Roberto ; Makarov, Alexander ; Ender, Johannes ; Fiorentini, Simone ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor | A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques | Konferenzbeitrag Inproceedings  | 2019 |
| 4 | | Grasser, T. ; Wagner, P.-J. ; Reisinger, H. ; Aichinger, Th. ; Pobegen, G. ; Nelhiebel, M. ; Kaczer, B. | Analytic modeling of the bias temperature instability using capture/emission time maps | Konferenzbeitrag Inproceedings | 2011 |
| 5 | | Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor | Applicability of Shockley-Read-Hall Theory for Interface States | Konferenzbeitrag Inproceedings | 2020 |
| 6 | | Franco, J. ; Wu, Z. ; Rzepa, G. ; Vandooren, A. ; Arimura, H. ; Ragnarsson, L. -A ; Hellings, G. ; Brus, S. ; Cott, D. ; De Heyn, V. ; Groeseneken, G. ; Horiguchi, N. ; Ryckaert, J. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration | Konferenzbeitrag Inproceedings | 2018 |
| 7 | | Franco, J. ; Putcha, V. ; Vais, A. ; Sioncke, S. ; Waldron, N. ; Zhou, D. ; Rzepa, G. ; Roussel, Ph. J. ; Groeseneken, G. ; Heyns, M. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited) | Konferenzbeitrag Inproceedings | 2017 |
| 8 | | Koller, Christian ; Pobegen, G. ; Ostermaier, C ; Pogany, Dionyz | Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics | Konferenzbeitrag Inproceedings | 2017 |
| 9 | | Michl, J. ; Grill, Alexander ; Stampfer, B. ; Waldhoer, D. ; Schleich, Christian ; Knobloch, T. ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, B. ; Parvais, B. ; Govoreanu, Bogdan ; Radu, I. ; Grasser, T. ; Waltl, M. | Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS | Inproceedings Konferenzbeitrag | 2021 |
| 10 | | Stanojevic, Zlatan ; Karner, Markus ; Kosina, Hans | Exploring the design space of non-planar channels: Shape, orientation, and strain | Konferenzbeitrag Inproceedings | 2013 |
| 11 | | Shrivastava, Mayank ; Bychikhin, Sergey ; Pogany, Dionyz ; Schneider, Jens ; Baghini, Shojaei ; Gossner, Harald ; Gornik, Erich ; Ramgopal Rao, V | Filament study of STI type drain extended NMOS device using transient interferometric mapping | Konferenzbeitrag Inproceedings | 2009 |
| 12 | | Jech, M. ; Tyaginov, S. ; Kaczer, B. ; Franco, J. ; Jabs, D. ; Jungemann, C. ; Waltl, M. ; Grasser, T. | First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation | Konferenzbeitrag Inproceedings | 2019 |
| 13 | | Grasser, T. ; Waltl, M. ; Wimmer, Y. ; Goes, W. ; Kosik, R. ; Rzepa, G. ; Reisinger, H. ; Pobegen, G. ; El-Sayed, A. ; Shluger, A. ; Kaczer, B. | Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes | Konferenzbeitrag Inproceedings | 2015 |
| 14 | | Meinhardt, Gerald ; Kraft, J. ; Löffler, B. ; Enichlmair, H. ; Röhrer, G. ; Wachmann, E. ; Schrems, Martin ; Swoboda, R. ; Seidl, Christoph ; Zimmermann, Horst | High-speed blue-, red-, and infrared-sensitive photodiode integrated in a 0.35 µm SiGe:C-BiCMOS process | Konferenzbeitrag Inproceedings | 2005 |
| 15 | | Makarov, A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology | Konferenzbeitrag Inproceedings | 2017 |
| 16 | | Grasser, T. ; Rott, K. ; Reisinger, H. ; Waltl, M. ; Wagner, P. ; Schanovsky, F. ; Goes, W. ; Pobegen, G. ; Kaczer, B. | Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI | Konferenzbeitrag Inproceedings | 2013 |
| 17 | | Kohn, Erhard ; Alomari, M ; Denisenko, A ; Dipalo, M ; Maier, D ; Medjdoub, F ; Pietzka, C ; Delage, S.L. ; diForte-Poisson, M.-A. ; Morvan, Erwin ; Sarazin, N ; Jacquet, J.-C. ; Dua, C ; Carlin, Jean-François ; Grandjean, Nicolas ; Py, M.A. ; Gonschorek, Marcus ; Kuzmik, Jan ; Pogany, Dionyz ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Toth, L. ; Pecz, B ; Gaquière, Christophe ; Cico, Karol ; Fröhlich, Karol ; Georgakilas, A ; Iliopoulos, E ; Konstantinidis, G. ; Giessen, C ; Heuken, M ; Schineller, B | InAlN/GaN Heterostructures for Microwave Power and Beyond | Konferenzbeitrag Inproceedings | 2009 |
| 18 | | Bina, M. ; Rupp, K. ; Tyaginov, S. ; Triebl, O. ; Grasser, T. | Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation | Konferenzbeitrag Inproceedings | 2012 |
| 19 | | Selberherr, S. | Modeling static and dynamic behavior of power devices | Konferenzbeitrag Inproceedings | 1983 |
| 20 | | Reiner, Maria ; Lagger, Peter Willibald ; Prechtl, G. ; Steinschifter, Patrick ; Pietschnig, R ; Pogany, Dionyz ; Ostermaier, Clemens | Modification of "Native" Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect Engineering | Konferenzbeitrag Inproceedings | 2015 |
