Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)

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Description

Event name
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)
 
Event type
Event for scientific audience
 
Start date
17-05-2009
End date
20-05-2009
 
Location
Malaga, Spain
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-7 of 7 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN PassivationKonferenzbeitrag Inproceedings2013
2Lindorfer, Philipp An Ideality Factor Formulation of Schottky Boundary Conditions in Numerical Device SimulationPräsentation Presentation1991
3Kuzmik, Jan ; Pogany, Dionyz ; Blaho, M. ; Gornik, Erich ; Javorka, P ; Marso, M ; Kordos, P Breakdown and degradation processes in AlGaN/GaN HEMTs during electrostatic dischargePräsentation Presentation2003
4Ostermaier, Clemens ; Kuzmik, Jan ; Carlin, Jean-François ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Cico, Karol ; Fröhlich, Karol ; Gonschorek, Marcus ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz High Performance normally-on and normally-off n++ GaN/InAlN/GaN HEMTsKonferenzbeitrag Inproceedings2009
5Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTSKonferenzbeitrag Inproceedings2013
6Alexewicz, Alexander ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Bychikhin, Sergey ; Kuzmik, J. ; Strasser, Gottfried ; Pogany, Dionyz Thermal analysis and simulation of InAlGaN/AlN GaN HEMTS on Si-Diamond-Si SubstratesKonferenzbeitrag Inproceedings2012
7Fleury, Clement ; Bychikhin, Sergey ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Transient Thermal Mapping Of P-Gan Gate Normally-Off Algan/gan TransistorsKonferenzbeitrag Inproceedings2013