International Conference on Solid State Devices and Materials (SSDM)

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Description

Event name
International Conference on Solid State Devices and Materials (SSDM)
 
Event type
Event for scientific audience
 
Start date
02-09-2019
End date
05-09-2019
 
Location
Nagoya
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Treffer 1-7 von 7 (Suchzeit: 0.001 Sekunden).

VorschauAutor_in(nen)TitelDokumenttypErscheinungs­datum
1Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M ; Grasser, Tibor Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect TransistorsKonferenzbeitrag Inproceedings 2015
2Illarionov, Yury ; Vexler, M.I. ; Fedorov, V. V. ; Suturin, S. M. ; Sokolov, N. S. ; Grasser, Tibor Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon MicroelectronicsKonferenzbeitrag Inproceedings 2015
3Makarov, Alexander ; Windbacher, Thomas ; Sverdlov, Viktor ; Selberherr, Siegfried Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell StructureKonferenzbeitrag Inproceedings 2015
4Reed, G.T. ; Thomson, D.J. ; Gardes, F.Y. ; Mashanovich, G ; Hu, Y ; Li, K ; Wilson, P.W. ; Zimmermann, L ; Porte, H ; Goll, Bernhard ; Zimmermann, Horst High speed silicon modulators for integrated transceiversKonferenzbeitrag Inproceedings2013
5Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Kaczer, Ben ; Grasser, Tibor On the Importance of Electron-electron Scattering for Hot-carrier DegradationKonferenzbeitrag Inproceedings 2014
6Tyaginov, S. E. ; Chasin, A ; Makarov, Alexander ; El-Sayed, Al-Moatasem ; Jech, Markus ; De Keersgieter, An ; Eneman, G. ; Vandemaele, Michiel ; Franco, J. ; Linten, D ; Kaczer, Ben Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETsKonferenzbeitrag Inproceedings 2019
7Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, A ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Jech, Markus ; Grasser, Tibor ; Linten, D ; Tyaginov, S. E. Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETsKonferenzbeitrag Inproceedings 2019