2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
23-09-2020
End date
06-10-2020
 
Location
Tokyo
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-8 of 8 (Search time: 0.005 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kosina, Hans ; Seiler, Heribert ; Sverdlov, Viktor Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS₂ NanoribbonsKonferenzbeitrag Inproceedings2020
2Fiorentini, Simone ; Ender, Johannes ; Mohamedou, Mohamed ; Orio, Roberto ; Selberherr, Siegfried ; Goes, Wolfgang ; Sverdlov, Viktor Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport ModelingKonferenzbeitrag Inproceedings2020
3Ender, Johannes ; Mohamedou, Mohamed ; Fiorentini, Simone ; Orio, Roberto ; Selberherr, Siegfried ; Goes, Wolfgang ; Sverdlov, Viktor Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM CellsKonferenzbeitrag Inproceedings2020
4Filipovic, Lado Electromigration Model for Platinum HotplatesKonferenzbeitrag Inproceedings2020
5Scharinger, Alexander ; Manstetten, Paul ; Hössinger, Andreas ; Weinbub, Josef Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCADKonferenzbeitrag Inproceedings2020
6Klemenschits, Xaver ; Selberherr, Siegfried ; Filipovic, Lado Geometric Advection Algorithm for Process EmulationKonferenzbeitrag Inproceedings2020
7Milardovich, Diego ; Jech, Markus ; Waldhoer, Dominic ; Waltl, Michael ; Grasser, Tibor Machine Learning Prediction of Defect Formation Energies in a-SiO₂Konferenzbeitrag Inproceedings2020
8Kosik, Robert ; Cervenka, Johann ; Kosina, Hans Numerical Solution of the Constrained Wigner EquationKonferenzbeitrag Inproceedings2020