Record link: 
http://hdl.handle.net/20.500.12708/77165
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Title: 
Machine Learning Prediction of Defect Formation Energies in a-SiO₂
en
Citation: 
Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., & Grasser, T. (2020). Machine Learning Prediction of Defect Formation Energies in a-SiO₂. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.23919/sispad49475.2020.9241609
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Publisher DOI: 
10.23919/sispad49475.2020.9241609
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Language: 
English
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Authors: 
Milardovich, Diego 
Jech, Markus 
Waldhoer, Dominic 
Waltl, Michael 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 
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ISBN: 
978-4-86348-763-5
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DOI of the book: 
10.23919/SISPAD49475.2020.9241672
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Date (published): 
2020
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Event name: 
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 
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Event date: 
23-Sep-2020 - 6-Oct-2020
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Event place: 
Tokyo, Japan
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Number of Pages: 
4
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Publisher: 
IEEE
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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