2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
09-09-2014
End date
11-09-2014
 
Location
Yokohama
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-15 of 15 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivityKonferenzbeitrag Inproceedings2014
2Goes, W. ; Waltl, M. ; Wimmer, Y. ; Rzepa, G. ; Grasser, T. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTIKonferenzbeitrag Inproceedings2014
3Filipovic, Lidija ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans BTB tunneling in InAs/Si heterojunctionsKonferenzbeitrag Inproceedings2014
4Rupp, Karl ; Bina, Markus ; Wimmer, Yannick ; Jungel, Ansgar ; Grasser, Tibor Cell-centered finite volume schemes for semiconductor device simulationKonferenzbeitrag Inproceedings2014
5Ceric, H. ; Zisser, W. H. ; Rovitto, M. ; Selberherr, S. Electromigration in solder bumps: A mean-time-to-failure TCAD studyKonferenzbeitrag Inproceedings2014
6Zisser, W. H. ; Ceric, H. ; Weinbub, J. ; Selberherr, S. Electromigration induced resistance increase in open TSVsKonferenzbeitrag Inproceedings2014
7Osintsev, Dmitri ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried Increasing mobility and spin lifetime with shear strain in thin silicon filmsKonferenzbeitrag Inproceedings2014
8Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried Influence of device geometry on the non-volatile magnetic flip flop characteristicsKonferenzbeitrag Inproceedings2014
9Baumgartner, O. ; Stanojevic, Z. ; Filipovic, L. ; Grill, A. ; Grasser, T. ; Kosina, H. ; Karner, M. Investigation of quantum transport in nanoscaled GaN high electron mobility transistorsKonferenzbeitrag Inproceedings2014
10Stanojevic, Z. ; Baumgartner, O. ; Karner, M. ; Filipovic, L. ; Kernstock, C. ; Kosina, H. On the validity of momentum relaxation time in low-dimensional carrier gasesKonferenzbeitrag Inproceedings2014
11Rzepa, G. ; Goes, W. ; Rott, G. ; Rott, K. ; Karner, M. ; Kernstock, C. ; Kaczer, B. ; Reisinger, H. ; Grasser, T. Physical modeling of NBTI: From individual defects to devicesKonferenzbeitrag Inproceedings2014
12Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
13Rudolf, Florian ; Weinbub, Josef ; Rupp, Karl ; Morhammer, Andreas ; Selberherr, Siegfried Template-based mesh generation for semiconductor devicesKonferenzbeitrag Inproceedings2014
14Filipovic, L. ; Rudolf, F. ; Baer, E. ; Evanschitzky, P. ; Lorenz, J. ; Roger, F. ; Singulani, A. ; Minixhofer, R. ; Selberherr, S. Three-dimensional simulation for the reliability and electrical performance of through-silicon viasKonferenzbeitrag Inproceedings2014
15Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. The Wigner Monte Carlo method for accurate semiconductor device simulationKonferenzbeitrag Inproceedings2014