2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Event name
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
09-09-2014
End date
11-09-2014
 
Location
Yokohama
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-15 of 15 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivityKonferenzbeitrag Inproceedings2014
2Goes, W. ; Waltl, M. ; Wimmer, Y. ; Rzepa, G. ; Grasser, T. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTIKonferenzbeitrag Inproceedings2014
3Filipovic, Lidija ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans BTB tunneling in InAs/Si heterojunctionsKonferenzbeitrag Inproceedings2014
4Rupp, Karl ; Bina, Markus ; Wimmer, Yannick ; Jungel, Ansgar ; Grasser, Tibor Cell-centered finite volume schemes for semiconductor device simulationKonferenzbeitrag Inproceedings2014
5Ceric, H. ; Zisser, W. H. ; Rovitto, M. ; Selberherr, S. Electromigration in solder bumps: A mean-time-to-failure TCAD studyKonferenzbeitrag Inproceedings2014
6Zisser, W. H. ; Ceric, H. ; Weinbub, J. ; Selberherr, S. Electromigration induced resistance increase in open TSVsKonferenzbeitrag Inproceedings2014
7Osintsev, Dmitri ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried Increasing mobility and spin lifetime with shear strain in thin silicon filmsKonferenzbeitrag Inproceedings2014
8Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried Influence of device geometry on the non-volatile magnetic flip flop characteristicsKonferenzbeitrag Inproceedings2014
9Baumgartner, O. ; Stanojevic, Z. ; Filipovic, L. ; Grill, A. ; Grasser, T. ; Kosina, H. ; Karner, M. Investigation of quantum transport in nanoscaled GaN high electron mobility transistorsKonferenzbeitrag Inproceedings2014
10Stanojevic, Z. ; Baumgartner, O. ; Karner, M. ; Filipovic, L. ; Kernstock, C. ; Kosina, H. On the validity of momentum relaxation time in low-dimensional carrier gasesKonferenzbeitrag Inproceedings2014
11Rzepa, G. ; Goes, W. ; Rott, G. ; Rott, K. ; Karner, M. ; Kernstock, C. ; Kaczer, B. ; Reisinger, H. ; Grasser, T. Physical modeling of NBTI: From individual defects to devicesKonferenzbeitrag Inproceedings2014
12Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
13Rudolf, Florian ; Weinbub, Josef ; Rupp, Karl ; Morhammer, Andreas ; Selberherr, Siegfried Template-based mesh generation for semiconductor devicesKonferenzbeitrag Inproceedings2014
14Filipovic, L. ; Rudolf, F. ; Baer, E. ; Evanschitzky, P. ; Lorenz, J. ; Roger, F. ; Singulani, A. ; Minixhofer, R. ; Selberherr, S. Three-dimensional simulation for the reliability and electrical performance of through-silicon viasKonferenzbeitrag Inproceedings2014
15Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. The Wigner Monte Carlo method for accurate semiconductor device simulationKonferenzbeitrag Inproceedings2014