IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Subject:  Electronic, Optical and Magnetic Materials
Author:  Kaczer, Ben

Results 1-9 of 9 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: TheoryArtikel Article 2021
2Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: ExperimentalArtikel Article 2021
3Grasser, Tibor ; Kaczer, Ben Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsArtikel Article2009
4Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
5Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
6Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Reisinger, H. ; Aichinger, T. ; Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Schanovsky, Franz ; Franco, J. ; Toledano-Luque, M. ; Nelhiebel, M. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsArtikel Article 2011
7Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014
8Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Roussel, Philippe J. ; Kauerauf, Thomas ; Mitard, Jérôme ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesArtikel Article2013
9Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTIArtikel Article2013