IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Grasser, T.
Author:  Waltl, Michael

Results 1-11 of 11 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
2Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: TheoryArtikel Article 2021
3Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: ExperimentalArtikel Article 2021
4Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
5Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
6Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article Aug-2020
7Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
8Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
9Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part I: ExperimentalArtikel Article 2017
10Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part II: TheoryArtikel Article 2017
11Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021