IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Subject:  Electrical and Electronic Engineering
Author:  Pogany, Dionyz

Results 1-8 of 8 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Karaca, Hasan ; Holland, Steffen ; Ritter, Hans-Martin ; Kumar, Vasantha ; Notermans, Guido ; Pogany, Dionyz 3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary IV Behavior and Holding Current in ESD Protection SCRsArtikel Article 2021
2Rigato, Matteo ; Fleury, Clement ; Schwarz, Benedikt ; Mergens, Markus ; Bychikhin, Sergey ; Simburger, Werner ; Pogany, Dionyz Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk TechnologyArtikel Article 2018
3Lagger, Peter ; Reiner, Maria ; Pogany, Dionyz ; Ostermaier, Clemens Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery ExperimentsArtikel Article 2014
4Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article 2018
5Pogany, D. ; Johnsson, D. ; Bychikhin, S. ; Esmark, K. ; Rodin, P. ; Stecher, M. ; Gornik, E. ; Gossner, H. Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLPArtikel Article2011
6Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
7Kuzmik, Jan ; Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Douvry, Yannick ; Gaquière, Christophe ; De Jaeger, Jean-Claude ; Cico, Karol ; Fröhlich, Karol ; Skriniarova, J. ; Kovac, J ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich Proposal and Performance Analysis of Normally Off n⁺⁺ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN BarrierArtikel Article Sep-2010
8Kuzmík, J. ; Ťapajna, Milan ; Válik, Lukas ; Molnar, Marian ; Donoval, D ; Fleury, Clement ; Pogany, Dionyz ; Strasser, Gottfried ; Hilt, O ; Brunner, Frank ; Würfl, Joachim Self-Heating in GaN Transistors Designed for High-Power OperationArtikel Article Oct-2014