Name Card

Full name Familienname, Vorname
Pogany, Dionyz
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 338 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Stabentheiner, M. ; Diehle, P. ; Hübner, S. ; Lejoyeux, M. ; Altmann, F. ; Neumann, R. ; Taylor, A. A. ; Pogany, Dionyz ; Ostermaier, Clemens On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devicesArticle Artikel 14-Jan-2024
2Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, D. ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasArticle Artikel Nov-2023
3Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, Dionyz ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasPresentation Vortrag4-Oct-2023
4Behrle, R. ; Sistani, M. ; Lugstein, A. ; Sadre Momtaz, Z. ; den Hertog, M. I. ; Pogany, D. ; Weber, W. M. Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistorsArticle Artikel 5-Jun-2023
5Krainer, Rudolf ; Jomar, Hossam Eldin ; Karaca, Hasan ; Pogany, Dionyz ; Holland, Steffen ; Ritter, Hans-Martin ; Kumar, Vasantha IV hysteresis in SCR due to interaction of bulk and surface current pathsPresentation Vortrag11-May-2023
6Jomar, Hossam Eldin ; Karaca, Hasan ; Krainer, Rudolf ; Pogany, Dionyz Compact modeling of sequential finger triggering in multi-finger SCRs using RC couplingPresentation Vortrag8-May-2023
7Pogany, Dionyz Field effect transistors based on III-nitride heterostructures for power switching applicationsPresentation Vortrag3-May-2023
8Wieland, D. ; Ofner, S. ; Stabentheiner, Manuel ; Butej, Boris ; Koller, C. ; Sun, J. ; Minetto, A ; Reiser, K. ; Häberlen, O. ; Nelhiebel, M. ; Glavanovics, M ; Pogany, D. ; Ostermaier, C A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit testsInproceedings Konferenzbeitrag 2023
9Böckle, R ; Sistani, Masiar ; Sadre-Momtaz, Zahra ; den Hertog, Martien ; Lugstein, Alois ; Weber, Walter M. ; Pogany, Dionyz Low-frequency Noise in Room-temperature quasi-ballistic Ge NW TransistorsKonferenzbeitrag Inproceedings2022
10Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
11Karaca, Hasan ; Holland, Steffen ; Ritter, Hans-Martin ; Kumar, Vasantha ; Notermans, Guido ; Pogany, Dionyz 3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary IV Behavior and Holding Current in ESD Protection SCRsArtikel Article 2021
12Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Ritter, Hans-Martin ; Krainer, Rudolf ; Kumar, V. ; Notermans, Guido ; Pogany, Dionyz Triggering of multi-finger and multi-segment SCRs near the holding voltage studied by emission microscopy under DC conditionsPräsentation Presentation2021
13Koller, C. ; Lymperakis, L. ; Pogany, D. ; Pobegen, G. ; Ostermaier, C. Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determinationArtikel Article 2021
14Kumar, V. ; Karaca, Hasan ; Holland, Steffen ; Ritter, Hans-Martin ; Pogany, Dionyz Influencing SCR Holding Current by Segmentation TopologyPräsentation Presentation2021
15Lambert, N. ; Taylor, A. ; Hubík, P. ; Bulíř, J. ; More-Chevalier, J. ; Karaca, H. ; Fleury, C. ; Voves, J. ; Šobáň, Z. ; Pogany, D. ; Mortet, V. Modeling current transport in boron-doped diamond at high electric fields including self-heating effectArtikel Article 2020
16Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Kumar, Vasantha ; Ritter, Hans-Martin ; Notermans, Guido ; Pogany, Dionyz Simultaneous and Sequential Triggering in Multi-Finger Floating-Base SCRs Depending on TLP Pulse Rise TimeArtikel Article 2020
17Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Ritter, H.-M. ; Notermans, Guido ; Pogany, Dionyz Mechanism of sequential finger triggering of multi-finger floating-base SCRs due to inherent substrate currentsKonferenzbeitrag Inproceedings2019
18Lambert, N ; Taylor, A. ; Hubik, P ; Bulir, J ; More-Chevalier, J ; Karaca, Hasan ; Fleury, Clement ; Pogany, Dionyz ; Mortet, V Modelling I-V characteristics of boron-doped diamond at high electric field including self-heating effectPräsentation Presentation2019
19Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistorsPräsentation Presentation2019
20Pogany, Dionyz Effects of interface and buffer defects on performance limitations and reliability of GaN HFETsPräsentation Presentation2019

Contributing Publications Mitbeteiligte Publikationen

Results 1-10 of 10 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Padovan, Valeria Characterization of hot electron degradation in GaN based HEMTsThesis Hochschulschrift2021
2Karaca Hasan - 2021 - Experimental and TCAD analysis of behaviour of multifinger...pdf.jpgKaraca, Hasan Experimental and TCAD analysis of behaviour of multifinger devices with substrate coupling and of filamentary states in SCRs for ESD protectionThesis Hochschulschrift 2021
3Jomar Hossam Eldin - 2021 - Compact Modelling of Transient Response of...pdf.jpgJomar, Hossam Eldin Compact Modelling of Transient Response of Multifinger DevicesThesis Hochschulschrift 2021
4Stabentheiner, Manuel Investigation of the gate leakage current degradation in p-GaN devicesThesis Hochschulschrift2018
5Rigato Matteo - 2018 - ESD experiments and simulations on RF CMOS switches.pdf.jpgRigato, Matteo ESD experiments and simulations on RF CMOS switchesThesis Hochschulschrift 2018
6Koller Christian - 2018 - The Role of Carbon in creating insulating behavior in...pdf.jpgKoller, Christian The Role of Carbon in creating insulating behavior in GaN-on-Si buffers: a physical modelThesis Hochschulschrift 2018
7Fleury Clement - 2017 - Behavior of silicon and gallium nitride devices under...pdf.jpgFleury, Clément Behavior of silicon and gallium nitride devices under electrical overstress conditionsThesis Hochschulschrift 2017
8Marko, Paul Low frequency noise and degradation mechanisms in GaN based HEMTsThesis Hochschulschrift2012
9Heer, Michael Holographic interferometric investigation of power devices under ESD stressThesis Hochschulschrift2005
10Pichler, Rudolf Untersuchung der Zündhomogenität von gg-nMOS ESD-Schutzstrukturen mittels optischer InterferometrieThesis Hochschulschrift2001