Record link: 
http://hdl.handle.net/20.500.12708/187447
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Title: 
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests
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Citation: 
Wieland, D., Ofner, S., Stabentheiner, M., Butej, B., Koller, C., Sun, J., Minetto, A., Reiser, K., Häberlen, O., Nelhiebel, M., Glavanovics, M., Pogany, D., & Ostermaier, C. (2023). A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–6). https://doi.org/10.1109/IRPS48203.2023.10117943
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Publisher DOI: 
10.1109/IRPS48203.2023.10117943
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Wieland, D. 
Ofner, S. 
Stabentheiner, Manuel 
Butej, Boris 
Koller, C. 
Sun, J. 
Minetto, A 
Reiser, K. 
Häberlen, O. 
Nelhiebel, M. 
Glavanovics, M 
Pogany, D. 
Ostermaier, C 
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Organisational Unit: 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Published in: 
2023 IEEE International Reliability Physics Symposium (IRPS) 
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Date (published): 
2023
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Event name: 
2023 IEEE International Reliability Physics Symposium (IRPS) 
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Event date: 
26-Mar-2023 - 30-Mar-2023
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Event place: 
USA, Austria
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Number of Pages: 
6
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Keywords: 
GaN; HEMTs; short-circuit
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Research Areas: 
Climate Neutral, Renewable and Conventional Energy Supply Systems: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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